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SMD-5962-02518 REV A
MICROCIRCUIT MEMORY CMOS, DIGITAL, 256M X 8 BIT STACKED DIE (2GBIT) SYNCHRONOUS DRAM (SDRAM), MODULE
Organization:
DLA - CC - DLA Land and Maritime
Year: 2009
Abstract: This drawing documents three product assurance class levels consisting of space application (device Class V), high reliability (device classes M and Q), and nontraditional performance environment (device Class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device Class N, the user is cautioned to assure that the device is appropriate for the application environment.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
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SMD-5962-02518 REV A
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:38:43Z | |
| date available | 2017-09-04T18:38:43Z | |
| date copyright | 40150 | |
| date issued | 2009 | |
| identifier other | AKVLPCAAAAAAAAAA.pdf | |
| identifier uri | http://mapnamagz.yabesh.ir/std;query=autho1826AF67FCdardstandardsfen/handle/yse/220450 | |
| description abstract | This drawing documents three product assurance class levels consisting of space application (device Class V), high reliability (device classes M and Q), and nontraditional performance environment (device Class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device Class N, the user is cautioned to assure that the device is appropriate for the application environment.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. | |
| language | English | |
| title | SMD-5962-02518 REV A | num |
| title | MICROCIRCUIT MEMORY CMOS, DIGITAL, 256M X 8 BIT STACKED DIE (2GBIT) SYNCHRONOUS DRAM (SDRAM), MODULE | en |
| type | standard | |
| page | 35 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2009 | |
| contenttype | fulltext |