SMD-5962-02518 REV A

MICROCIRCUIT MEMORY CMOS, DIGITAL, 256M X 8 BIT STACKED DIE (2GBIT) SYNCHRONOUS DRAM (SDRAM), MODULE

contributor author	DLA - CC - DLA Land and Maritime
date accessioned	2017-09-04T18:38:43Z
date available	2017-09-04T18:38:43Z
date copyright	40150
date issued	2009
identifier other	AKVLPCAAAAAAAAAA.pdf
identifier uri	http://mapnamagz.yabesh.ir/std;query=autho1826AF67FCdardstandardsfen/handle/yse/220450
description abstract	This drawing documents three product assurance class levels consisting of space application (device Class V), high reliability (device classes M and Q), and nontraditional performance environment (device Class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device Class N, the user is cautioned to assure that the device is appropriate for the application environment.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
language	English
title	SMD-5962-02518 REV A	num
title	MICROCIRCUIT MEMORY CMOS, DIGITAL, 256M X 8 BIT STACKED DIE (2GBIT) SYNCHRONOUS DRAM (SDRAM), MODULE	en
type	standard
page	35
status	Active
tree	DLA - CC - DLA Land and Maritime:;2009
contenttype	fulltext