| contributor author | ARMY - CR - US Army Communications Electronics Command | |
| date accessioned | 2017-09-04T15:14:33Z | |
| date available | 2017-09-04T15:14:33Z | |
| date copyright | 04/01/1960 | |
| date issued | 1960 | |
| identifier other | MDSKDAAAAAAAAAAA.pdf | |
| identifier uri | http://mapnamagz.yabesh.ir/std;queryioutho179893FDFCDCAC4/handle/yse/13419 | |
| description abstract | This specification covers the detail requirements for a silicon, PNP, junction transistor with the following characteristics at TA = +25°C, VCB = −5Vdc, and IE = 3 mAdc. ![TABLE]() | |
| language | English | |
| title | MIL-S-19500/111 | num |
| title | TRANSISTOR, PNP, SILICON TYPE 2N329A | en |
| type | standard | |
| page | 10 | |
| status | Active | |
| tree | ARMY - CR - US Army Communications Electronics Command:;1960 | |
| contenttype | fulltext | |
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