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SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:39:38Z
date available2017-09-04T18:39:38Z
date copyright06/20/2013
date issued2013
identifier otherJSNWDFAAAAAAAAAA.pdf
identifier urihttp://mapnamagz.yabesh.ir/std;query=autho1826AF67FCdardstandardsfen/handle/yse/221258
description abstractThis specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/427Pnum
titleSEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKCen
typestandard
page24
statusActive
treeDLA - CC - DLA Land and Maritime:;2013
contenttypefulltext


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