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SEMICONDUCTOR DEVICE, FIELD EFFECT POWER TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 U AND U5 SUFFIXES, JANTXV, AND RADIATION HARDENED TYPE SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:38:37Z
date available2017-09-04T18:38:37Z
date copyright04/17/2013
date issued2013
identifier otherAKVECFAAAAAAAAAA.pdf
identifier urihttp://mapnamagz.yabesh.ir/std;query=autho1826AF67FCdardstandardsfen/handle/yse/220362
description abstractThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/601Knum
titleSEMICONDUCTOR DEVICE, FIELD EFFECT POWER TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 U AND U5 SUFFIXES, JANTXV, AND RADIATION HARDENED TYPE SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND Hen
typestandard
page27
statusActive
treeDLA - CC - DLA Land and Maritime:;2013
contenttypefulltext


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