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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:38:28Z
date available2017-09-04T18:38:28Z
date copyright03/28/2012
date issued2012
identifier otherJPVCCFAAAAAAAAAA.pdf
identifier urihttp://mapnamagz.yabesh.ir/std;query=autho1826AF67FCdardstandardsfen/handle/yse/220243
description abstractThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/664Dnum
titleSEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND Hen
typestandard
page22
statusActive
treeDLA - CC - DLA Land and Maritime:;2012
contenttypefulltext


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