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MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:36:47Z
date available2017-09-04T18:36:47Z
date copyright04/19/2012
date issued2012
identifier otherJMBCVEAAAAAAAAAA.pdf
identifier urihttp://mapnamagz.yabesh.ir/std;query=autho1826AF67FCdardstandardsfen/handle/yse/218775
description abstractThis drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing. Substitutability. Device class Q devices will replace device class M devices.
languageEnglish
titleSMD-5962-96586 REV Bnum
titleMICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICONen
typestandard
page16
statusActive
treeDLA - CC - DLA Land and Maritime:;2012
contenttypefulltext


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