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MIL-PRF-19500/687B VALID NOTICE 1
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:35:36Z | |
| date available | 2017-09-04T18:35:36Z | |
| date copyright | 08/13/2013 | |
| date issued | 2013 | |
| identifier other | JJFZFFAAAAAAAAAA.pdf | |
| identifier uri | http://mapnamagz.yabesh.ir/std;query=autho1826AF67FCdardstandardsfen/handle/yse/217653 | |
| language | English | |
| title | MIL-PRF-19500/687B VALID NOTICE 1 | num |
| title | Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R | en |
| type | standard | |
| page | 1 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2013 | |
| contenttype | fulltext |
