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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7411 JANSD AND JANSR

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:34:10Z
date available2017-09-04T18:34:10Z
date copyright02/06/2003
date issued2003
identifier otherJFZQBBAAAAAAAAAA.pdf
identifier urihttp://mapnamagz.yabesh.ir/std;query=autho1826AF67FCdardstandardsfen/handle/yse/216410
languageEnglish
titleMIL-PRF-19500/639A VALID NOTICE 1num
titleSEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7411 JANSD AND JANSRen
typestandard
page1
statusActive
treeDLA - CC - DLA Land and Maritime:;2003
contenttypefulltext


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