درباره ما
SMD-5962-93249 REV B
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:32:06Z | |
| date available | 2017-09-04T18:32:06Z | |
| date copyright | 05/09/2006 | |
| date issued | 2006 | |
| identifier other | JANDJBAAAAAAAAAA.pdf | |
| identifier uri | http://mapnamagz.yabesh.ir/std;query=autho1826AF67FCdardstandardsfen/handle/yse/214315 | |
| description abstract | Scope: This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. | |
| language | English | |
| title | SMD-5962-93249 REV B | num |
| title | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON | en |
| type | standard | |
| page | 26 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2006 | |
| contenttype | fulltext |
